Antiferromagnetic materials for fast and energy-efficient computing
University of Cambridge
Physics
What if the world’s computers ran one thousand times
faster? This would be a huge boon to a wide range of fields: allowing
accelerated drug discovery, broad access to artificial intelligence, and
improved financial modelling, as just a few examples. But as our current
computing technologies require a constant input of energy – which is mostly
wasted as heat – any improvements in speed are met with increased energy
consumption, which is unacceptable in an era of soaring energy costs and
concern about climate change. My vision is to create a best-of-all-worlds data
storage device that combines high speeds, energy-efficiency and non-volatility,
all at a low cost.
Antiferromagnets should have ideal properties for such an
application. On the atomic scale, these materials possess spins arranged in a
periodic counteracting fashion, leading to theoretical switching speeds at
picosecond timescales while still offering non-volatile, energy efficient storage.
The opposing arrangement of spins also allows for high on-chip packing density,
bringing down production costs. Unfortunately, antiferromagnets are also
notoriously difficult to characterise – simply imaging the spin structure in an
antiferromagnet ordinarily requires high-energy X-rays produced at a
synchrotron facility. The impossibility of practically accessing the local spin
state in a realistic device has so far hampered exploitation of these useful
properties.
This project stands at the interface between Physics and
Materials science, and seeks to resolve this problem by developing memory
devices that instead incorporate unconventional antiferromagnets with a
triangular spin structure. These materials host a topological electron
wavefunction phase effect, known as Berry curvature, that manifests as
anomalous physical properties not normally present in antiferromagnets and
creates a measurable electrical response. Such properties provide new
opportunities to visualise and control the underlying spin state quickly and
easily using a large variety of external stimuli such as electric current,
heat, light and strain. The proposal seeks to harness these properties in
real-world devices, in order to build up a picture of the spin structure on the
nanoscale and explore the most efficient ways to facilitate ultrafast
switching.